CIGS薄膜太阳能电池缓冲层材料的研究进展  

Research Progress on Buffer Layer Materials of CIGS Thin Film Solar Cell

作　　者：王卫兵[1] 刘平[2] 李伟[2] 马凤仓[2] 刘新宽[2] 陈小红[2] 

机构地区：[1]上海理工大学机械工程学院,上海200093 [2]上海理工大学材料科学与工程学院,上海200093

出　　处：《材料导报》2012年第19期136-140,共5页Materials Reports

基　　金：上海市科技攻关项目(08110511600);上海市教委重点学科项目(J50503)

摘　　要：CIGS薄膜太阳能电池的缓冲层为低带隙CIGS吸收层与高带隙ZnO窗口层之间形成过渡,减少两者带隙的晶格失配和带隙失调,并可防止溅射ZnO窗口层时给CIGS吸收层带来损害等,对提高CIGS薄膜太阳能电池效率起了重要作用。介绍了CIGS薄膜太阳能电池缓冲层材料的分类和制备工艺,主要阐述了CdS、ZnS及In2S3薄膜缓冲层材料及化学水浴法、原子层化学气相沉积法、金属化合物化学气相沉积法等制备工艺的研究现状,最后指出CIGS太阳能电池缓冲层在制备工艺、环境保护及大规模工业化生产中遇到的问题,并展望了其发展方向。The buffer layers of CIGS thin film solar cells can form transition layers between low band gap CIGS absorber layers and high band gap of ZnO window layers, which reduces the lattice matching and band gap difference, and prevents damage of CIGS absorber layer from sputtering ZnO window layer, and therefore plays an important role in improving efficiency of CIGS thin film solar cells. Classification and preparation technology of CIGS thim film solar cells material are discussed, including the research progress of CdS, ZnS and Inz S~ thin film buffer layer materials, and chemical bath deposition （CBD）, atomic layer chemical vapor deposition （ALCVD）, metal organic chemical vapor depo- sition （MOCVD） and other preparation technologies. The problems and development directions of buffer layer mate- rials of CIGS thin film solar cells in preparation process, environment protection and large-scale industrial production are finally prospected.

关 键 词：CIGS 太阳能电池 缓冲层 

分 类 号：TN304.23[电子电信—物理电子学]