Be薄膜制备及其生长动力学性质研究  

Preparation of Be Thin Films and the Growth Dynamic Characteristics

作　　者：罗炳池[1] 罗江山[1] 李恺[1] 张吉强[1] 吴卫东[1] 唐永建[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《稀有金属材料与工程》2012年第9期1684-1688,共5页Rare Metal Materials and Engineering

基　　金：高温高密度等离子体物理国防科技重点实验室基金(9140C6805021008)

摘　　要：采用真空蒸镀法制备厚度400~2100nm、表面均方根粗糙度Rq〈6.0nm的Be薄膜。XRD结果表明不同厚度Be薄膜均由hcp结构的（αBe）相组成。当蒸发温度从1243K增加至1403K时,Be原子沉积速率急剧增大,α-Be晶粒平均直径增大近3倍,其择优取向发生显著改变。薄膜表面小岛由不规则的多边形晶粒逐渐转化为棱角分明的六边形晶粒,而横截面形貌始终以柱状晶生长为主,它垂直于基片呈定向排列。此外,理论计算的Be薄膜生长速率与实验测定的结果十分吻合,它与平衡蒸气压成正比,随蒸发温度的升高而呈指数函数关系增大。Beryllium thin films with a thickness of 400-2100 nm and root of mean square roughness Rq〈6.0 nm were grown on the SiO2 substrate by the evaporation deposition method. X-ray diffraction analysis indicates that Be thin films with different thickness consist of hcp structure a-Be phase. As the evaporation temperature increases from 1243 to 1403 K, the deposition rate of Be atom increases rapidly, the average diameter of a-Be crystalline grain becomes 3 times larger, and its preferential orientation changes remarkably. The island grains on the thin film surface show a transition from polygon grain to hexagon grain. Otherwise, cross section microstructures of thin films are mainly characterized by column crystal, and they are perpendicular to the SiO2 substrate and of directional array. Furthermore, the calculated growth velocities of Be thin films are in good agreement with experimental results. The growth velocities are directly proportional to the equilibrium vapor pressure, and increase dramatically with the evaporation temperatures rising

关 键 词：铍薄膜 蒸镀 柱状晶 岛状生长 

分 类 号：O484.1[理学—固体物理]