高功率脉冲磁控溅射沉积原理与工艺研究进展  

Progress in Deposition Principle and Process Characteristics of High Power Pulse Magnetron Sputtering

作　　者：吴志立[1] 朱小鹏[1] 雷明凯[1] 

机构地区：[1]大连理工大学材料科学与工程学院表面工程实验室,辽宁大连116024

出　　处：《中国表面工程》2012年第5期15-20,共6页China Surface Engineering

基　　金：国家重点基础研究发展计划(973计划)(2009CB724305);国家自然科学基金青年基金(51102032);中国博士后科学基金面上项目(20110491520)

摘　　要：高功率脉冲磁控溅射技术是一种峰值功率超过平均功率2个量级、溅射靶材原子高度离化的脉冲溅射技术,作为一种新的离子化物理气相沉积技术,已成为国际研究的热点,有关高功率脉冲放电、等离子体特性、薄膜及其工艺等方面的研究进展十分迅速。文中从高功率脉冲磁控溅射的原理出发,介绍10多年来高功率脉冲电源的发展,从高功率脉冲放电等离子体特性与放电物理、等离子体模型,以及沉积速率和薄膜特性等方面综述技术的研究进展。High power pulsed magnetron sputtering （HPPMS） is pulsed sputtering where the peak power exceeds the time-averaged power by two orders of magnitude and a very significant fraction of the sputtered atoms becomes ionized. As a new developing ionized physical vapor deposition, HPPMS has received extensive interest from researchers and led to a substantial increase of the publications related to the high power pulsed discharge, the plasma characteristic, and the films and their process. This paper describes the definition and the basic principle of HPPMS and reviews the recent advance in the high power pulsed power supply, the plas- ma characteristics and discharge physics, the plasma model and deposition rate, and the thin film properties for HPPMS.

关 键 词：高功率脉冲磁控溅射 等离子体 薄膜 研究进展 

分 类 号：TG174.444[金属学及工艺—金属表面处理]