金刚石电子器件的研究进展  

Research Progress of Diamond Based Electronic Devices

作　　者：袁明文[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2012年第10期643-649,672,共8页Micronanoelectronic Technology

摘　　要：简述了金刚石半导体电气性质,即高击穿电场、宽带隙、高载流子饱和速度、高载流子迁移率和高热导率。回顾了金刚石器件的研究进程。讨论了器件的工作机理,包括掺杂和空穴积累层。详细描述了几种具有潜力的金刚石电子器件,如高压二极管和功率场效应管。尽管金刚石器件研究仍存在一些问题,如掺杂机理复杂,金刚石的单晶尺寸太小等,严重制约金刚石电子的进展,但是由于金刚石是超高功率和高温器件的优良半导体材料,具有替代行波管技术的潜力。当前,CVD金刚石已经大量用于微电子和光电子,包括激光二极管、微波器件、半导体散热器等。The electrical property of the diamond is introduced briefly,such as the high breckdown field,wide band gap,high carrier saturation velocity,carrier mobility and thermal conductivity.The research process of the diamond device is reviewed.The working principle of the device is discussed,including the doping and hole acumulation layer.Several promising diamond devices are discussed in detail,i.e.the high voltage diode and power MESFET.Although there are still some issues for the research of the diamond device,such as the complex doping mechanism and small size of the diamond monocrystal,which seriously restrict the development of the diamond microelectronics,the diamond has the potential to replace the travelling wave tube（TWT） because it is a superior semiconductor material with ultra high power and high temperature performance.Currently,the CVD diamond is widely used in microelectronics and optoelectronics,including the laser diodes,microwave devices and semiconductor heat spreaders.

关 键 词：金刚石 宽带隙 电子器件 场效应管(FET) 化学气相沉积(CVD) 

分 类 号：TN304.18[电子电信—物理电子学] TN3