单bar大功率半导体激光器寿命评价技术  

Lifetime evaluation on high power cm-bars

作　　者：路国光 黄云 雷志锋 

机构地区：[1]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广东广州510610

出　　处：《红外与激光工程》2012年第9期2328-2332,共5页Infrared and Laser Engineering

基　　金：国家光电子预先研究项目(51302010309A);国家重大科学仪器设备开发专项(2011YQ040077)

摘　　要：大功率半导体激光器工程应用要求其寿命大于109脉冲次数,如何在短时间内快速获得大功率半导体激光器的长寿命指标,是目前业界普遍关注的问题。文中针对808nm大功率半导体激光器单bar器件,进行了温度25℃、电流100 A和温度50℃、电流100 A及温度50℃、电流115 A 3组寿命评价试验,综合利用线性回归分析、最小二乘法、拟合优度检验等统计学相关知识,确定单bar大功率半导体激光器恒温25℃外推寿命为2.86×109次脉冲次数(7 950 h),激光器激活能为0.21 eV,加速因子为1.88。并通过数据分析,确定恒温25℃最佳寿命试验时间为4 000 h,此时,既能保证外推结果的准确性,又能降低试验时间和成本,实现短期寿命试验数据对大功率半导体激光器长寿命的快速评价。The lifetime of high power laser diodes is required to exceed 109 shots for engineering application field,and how to obtain the lifetime of high power laser diodes in a short time with short-term aging data is a problem attracting much attention.In this paper,three groups of aging tests were conducted on 808 nm high power qusi-contious-wave（QCW） laser bars,under the aging conditions of 25 ℃,100 A and 50 ℃,100 A and 50 ℃,115 A respectively.According to the linear regression analysis,the method of least squares,goodness-of-fit test and other statistical knowledge,the extrapolated lifetime of cm-bars at 25 ℃ is 2.86×109 shots（7 950 h）,an acceleration factor 1.88 of resulting in a thermal activation energy of Ea=0.21 eV was also obtained using Arrhenius function.The optimal aging test time is 4 000 h after analysis of the aging data.We can not only obtain the creditable and exact extrapolated results,but also farthest reduce the aging test time and costs at this time,and accomplish the long lifetime evaluation on high power laser diodes by using short-term aging data.

关 键 词：半导体激光器 寿命 激活能 加速因子 

分 类 号：TN248.4[电子电信—物理电子学]