薄膜厚度对FeZrBNb单层膜巨磁阻抗效应的影响  

Thickness Effect on Giant Magneto-impedance in FeZrBNb Single Films

作　　者：袁慧敏[1] 王文静[1] 姬长建[1] 

机构地区：[1]齐鲁师范学院物理系,山东济南250013

出　　处：《齐鲁师范学院学报》2012年第5期42-44,共3页Journal of Qilu Normal University

基　　金：山东省高等学校科技计划项目(J11LA58)

摘　　要：用射频溅射法制备了FeZrBNb合金薄膜,研究薄膜厚度对巨磁阻抗效应的影响。结果表明,适当增大薄膜的厚度可以降低薄膜样品的临界频率,提高阻抗比。频率为13MHz时,厚度为10.8μm的薄膜样品的最大纵向阻抗比达到了5.9%,高于3.5μm的薄膜样品(最大纵向阻抗比为1.9%);而临界频率为400kHz,远低于薄膜厚度为3.5μm的样品(临界频率为1.3MHz)。The FeZrBNb soft magnetic alloy films were deposited by radio frequency sputtering on the substrate of single crystal Si. Giant magneto- impedance （GMI） effect was investigated in different thickness FeZrBNb single films. The results show that increasing the thickness of the film can reduce the critical frequency, improve the GMI ratios. The maximum values of longitudinal GMI ratios are 5.9% and 1.9% for 10.8μm and 3.5μm thin films, respectively, at the frequency of 13MHz. The critical frequencies are 400kHz and 1.3MHz for 10.8μm and 3.5μm thin films, respectively.

关 键 词：巨磁阻抗效应 临界频率 趋肤深度 退火 

分 类 号：O484[理学—固体物理]