基于CMOS数字工艺的低噪声传感器接口电路  

A Low Noise Sensor Interface Circuit Based on Digital CMOS Process

作　　者：黄卓磊[1] 王玮冰[1] 彭城[1] 祖秋艳[1] 陈大鹏[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2012年第5期605-608,共4页Microelectronics

基　　金：国家科技重大专项(2011ZX02507)

摘　　要：设计了一种应用于超低频率的低噪声MEMS传感器接口电路。该电路利用斩波技术降低1/f噪声,并利用MOS电容替代模拟无源元件等方法,使之与数字工艺相兼容。采用CSMCCMOS 0.5μm 2P3MCMOS工艺,实现了增益为36dB的读出电路。该电路的等效输入噪声功率谱密度为13μV/（Hz）~1/2,3阶交调失真为-33.6dB。电路的功耗为10mW。A low noise interface circuit in MEMS sensor system for ultra-low frequency signal was presented,in which chopper technique was used to reduce 1/f noise,and MOS capacitors were adopted to replace analog passive components.Based on CSMC′s CMOS 0.5 μm 2P3M process,a sensing circuit with 36 dB of gain was fabricated.Test results showed that the circuit achieved an equivalent input noise of 13 μV/（Hz）~1/2 and a 3rd-order inter-modulation distortion of-33.5 dB,and it dissipated 10 mW of power.

关 键 词：读出电路 斩波技术 CMOS数字工艺 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]