SiGe HBT双频段可变增益放大器设计  

Design of Dual Band Variable Gain Amplifier in SiGe HBT Process

作　　者：路志义[1] 谢红云[1] 张万荣 霍文娟[1] 郭振杰[1] 邢光辉[1] 张瑜洁[1] 丁春宝[1] 金冬月[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《微电子学》2012年第5期617-621,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776051;61006044;61006059);北京市自然科学基金资助项目(4082007;4122014);北京市教委科技发展计划项目(KM200710005015;KM200910005001);北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001);北京市优秀跨世纪人才基金资助项目(67002013200301)

摘　　要：提出了一款新型的双频段可变增益放大器(DBVGA),分别工作在3G-WCDMA的2.2GHz和WLAN的5.2GHz两个频段。放大器分为增益控制级、输入输出级和放大级。其中,增益控制级采用电流驱动技术和发射极串联电感来减小噪声和输入阻抗的影响,进而实现大动态的增益变化。输入级通过电容电感串并联方法实现双频段的输入匹配。放大级使用Cascode结构和电流复用技术来提高增益和减小功耗。采用Jazz 0.35μm SiGe BiCMOS工艺设计芯片版图,版图面积为0.5mm2。仿真结果表明,当控制电压从0V到1.4V变化时,DBVGA在2.2GHz和5.2GHz下的增益可变范围分别达到30dB和16dB,最大增益处的噪声分别为2.3dB和3.2dB,输入和输出驻波比约1.5。A novel dual-band variable gain amplifier（DBVGA） was presented,which operated at 2.2 GHz for 3G-WCDMA and 5.2 GHz for WLAN,respectively.The DBVGA was composed of gain control,input/output and amplifier stages.In gain control stage,DC and RF current steering technique was used for gain control and inductor degeneration in emitter,to reduce effects of noise and input impedance and extend the variable gain range.In input stage,input matching between two frequency bands was realized by using serial and parallel LC circuits.Cascode construction and current reuse technique were adopted for amplifier stage to enhance gain and reduce power.The circuit was designed based on Jazz′s 0.35 μm SiGe BiCMOS process,and the chip occupied an area of 0.5 mm2.Simulation results showed that the DBVGA achieved a 30 dB and 16 dB dynamic range in 2.2 GHz and 5.2 GHz,for control voltage varying from 0 V to 1.4 V,and a noise factor of 2.3 dB and 3.2 dB for maximum gain,respectively.And both input and output VSWR were close to 1.5.

关 键 词：双频段可变增益 电流复用 电流驱动 SiGe HBT 

分 类 号：TN722.3[电子电信—电路与系统]