AlN薄膜体声波谐振器的二维数值模拟  

Two-dimension Numerical Simulation of AlN Film Bulk Acoustic Resonator (FBAR)

作　　者：于小利[1] 罗中涌[1] 曹明[1] 公勋[1] 章德[1] 

机构地区：[1]近代声学教育部重点实验室,南京大学声学所,江苏南京210093

出　　处：《压电与声光》2012年第5期661-663,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(10974094)

摘　　要：利用时域有限差分法对薄膜体声波谐振器进行了二维数值分析。对压电方程和牛顿运动方程在时域和空域利用中间差分进行离散化。采用ANSOFT Maxwell 2D商业软件计算静电场的分布,得到了电场强度的分布。可精确预测各场分量在空间和时间上的分布。在记录一段时间内的电压和电流值的基础上,利用Prony算法计算了薄膜体声波谐振器的电学阻抗特性。The finite-difference time-domain （FDTD） method has been applied to analyze numerically the thin-film bulk acoustic wave resonators in this paper. The piezoelectric governing equations and Newton′s equation of motion are discretized in spatial and temporal domain using the intermediate difference. An electrostatic field simulator named ANSOFT Maxwell 2D is used to calculate the electric field distribution and the distribution of the electric field intensity has been obtained. The distribution of every field component in spatial and temporal domain can be predicted accurately. Based on the record of the values of electrical voltage and electrical flow for a time interval, the frequency domain electrical impedance characteristics of FBAR with different electrode thicknesses are calculated by using the Prony＇s method.

关 键 词：时域有限差分法 薄膜体波谐振器 电阻抗特性 

分 类 号：O42[理学—声学] TN65[理学—物理]