功率MOSFET管驱动变压器设计  

Method to Design the Transform Driving Power MOSFET

作　　者：顾公兵[1] 欧阳玲[1] 廖启新[1] 张宗廉[1] 

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《磁性元件与电源》2012年第10期127-130,共4页Components and Power

摘　　要：对具有驱动变压器的功率MOSFET管驱动电路的动态过程进行了分析，推导了驱动变压器设计参数（绕组电流有效值，变压器功率）的计算方法，定量分析了变压器漏感和电路杂散电感对开通过程的影响，并通过仿真和试验验证了这套计算方法的正确性。In the paper, the dynamic process when the drive circuit with a transform is turned on or oll is analyzed firstly, and the method to calculate the main parameters including power and virtual value of current in order to design drive transform is derived, then the effect of both leakage inductance of transform and stray inductance of lines on the dynamic process is discussed in detail. In the end, the works is checked up by simulations and a physical drive circuit.

关 键 词：功率MOSFET管 驱动变压器 开关电源 

分 类 号：TM4[电气工程—电器]