高有序Bi_4Si_3O_(12)微晶列结构特征分析  

The Characteristic Analysis of High Ordered Bi_4Si_3O_(12) Micro-crystals Structure

作　　者：张争光[1,2] 

机构地区：[1]咸阳师范学院,咸阳712000 [2]西北大学现代物理研究所,西安710069

出　　处：《硅酸盐通报》2012年第5期1133-1137,共5页Bulletin of the Chinese Ceramic Society

摘　　要：在常压下使用烧结法制备了具有高有序结构的Bi4Si3O12微晶。利用X射线衍射分析了生成样品的物相,通过环境扫描电镜观察了Bi4Si3O12晶体微观形貌。用单样本Kolmogorov-Smirnov法分别对晶粒夹角进行了统计学检验。结果显示:在一个稳定的硅酸铋晶列中晶粒成对分布。在一个晶行的一侧,晶粒取向和该晶行发育方向之间的夹角服从正态分布。晶行一侧的晶粒取向夹角的大小范围为53.9°～68.9°。一个稳定晶行一侧的平均晶粒夹角和晶粒尺寸之间具有高度的正相关性。如果稳定晶行一侧的平均晶粒夹角超过稳定晶列中晶粒夹角范围的最大值(68.9°),对应侧的高有序的晶列结构将会被破坏。然而,一侧有序结构的局部湮灭过程不会对晶行另一侧的高有序结构产生任何影响。Bismuth silicate （Bi4Si3012） micro-crystals with grain line structure were grown by sintering method under atmosphere pressure. The as-grown products were studied using X-ray diffraction and environmental scanning electron microscopy. The grain orientation law was tested by One-Sample Kolmogorov-Smirnov test. The result shows Bi4Si3Olz grains are always distributed in pairs on both sides of a stable line. The angle between grain orientation and the line growth direction obeys the normal distribution on one side of grain line. In a stable line, the mean angle on one side is from 53.9°to 68.9°. On one side of a stable line, there is a significant positive correlation between mean angle and mean grain size. When mean angle on one side exceeds 68.9°, the ordered structure on the side is destroyed. The elimination process on the one side has no influence on highly ordered structure on the opposite side.

关 键 词：Bi4Si3O12 晶列结构 晶粒夹角 湮灭 

分 类 号：O764[理学—晶体学]