基于半残次硅片的太阳电池性能研究  

Functional Research of Solar Cell on the Basis of Semi-Defective Silicon Wafer

作　　者：王丽[1] 王晓忠[1] 陈阿青[1] 梅建滨[1] 邹禧武[1] 

机构地区：[1]乐山职业技术学院,四川乐山614004

出　　处：《西南师范大学学报（自然科学版）》2012年第10期123-126,共4页Journal of Southwest China Normal University(Natural Science Edition)

基　　金：四川省科技厅院级合作项目(10ZC1914);四川省科技厅重大技术支撑项目(10ZC1893)

摘　　要：选取了在硅片加工过程中产生的线痕片、厚片、薄片、崩片和TTV片共5种类型的半残次硅片,制备了太阳能电池,并在中山大学太阳能系统研究所进行了太阳电池片的实验研究,分析了这些残次片电池的开路电压、短路电流、填充因子、转换效率,研究结果表明,半残次硅片所制备的太阳电池性能良好:这些电池片的平均转换效率都达到了15.80%以上,填充因子可达73.98%,短路电流在5.10～5.28A之间,开路电压在0.62V以上,对于降低太阳电池成本具有一定参考价值.The solar cells,fabricated by the semi-defective silicon wafers and produced during the processing,have been studied in this paper.Five types of semi-defective silicon wafers,including line scored wafer,thickness wafer,thin wafer,disintegrating wafer,and total thickness variety wafer,have been chosen for functional research.The characteristics of these solar cells,including open voltage,short circuit current,filling factor and conversion efficiency have been analyzed.The results show that the average conversion efficiency,filling factor,open voltage reach above 15.8%,73.98% and above 0.62V,respectively.The short circuit current ranges from 5.10-5.28A.Therefore,our studies on the solar cell fabricated by the semi-defective silicon wafers have great significance in cutting the cost of solar cell.

关 键 词：半残次片 太阳电池 转换效率 开路电压 短路电流 填充因子 

分 类 号：TM914.4[电气工程—电力电子与电力传动]