非统一多量子阱波长可选DFB激光器  

Wavelength Selectable DFB Laser Based on Non-Uniform Multiple Quantum Wells

作　　者：谢红云[1] 霍文娟[1] 江之韵[1] 路志义[1] 张万荣 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《中国激光》2012年第10期6-10,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(61006044;60776051;61006059);北京市自然科学基金(4122014;4082007);北京市教委科技发展计划(KM200910005001;KM200710005015)资助课题

摘　　要：报道了一种单片集成的串联DFB激光器芯片,在合适工作条件下,可以在疏波分复用(CWDM)的两个信道波长激射。芯片通过非统一多量子阱有源区拓宽材料增益谱,给DFB激光器的纯折射率光栅引入弱增益耦合,提高DFB激光器的动态单模特性。芯片采用普通DFB激光器的制备工艺制备,工艺简单成本低,重复性高。测试结果表明,芯片能够在1.51μm和1.53μm两个波长激射,出光功率均能达到6mW以上,边模抑制比均达到40dB。A monolithic integrated chip with DFB lasers in serial is presented,which provides two selectable wavelengths for coarse wave divide multiplexing（CWDM） channel at suitable working condition.Non-uniform multiple quantum wells is designed and grown to widen active material gain spectrum.Weak gain coupled is added into pure refractive index grating of each DFB laser to promote dynamic single mode.The monolithic chip is fabricated with common process of DFB laser,which has the features of simple process,low cost and high repetition.Test results show that the chip can output at two wavelengths of 1.51 μm and 1.53 μm.Output powers are both higher than 6 mW and single mode suppression ratios both achieve 40 dB.

关 键 词：激光器 波长可选 非统一量子阱 弱增益耦合 单片集成 

分 类 号：TN242[电子电信—物理电子学]