硅薄膜的短波红外光学特性和1.30μm带通滤光片  

Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter

作　　者：段微波[1] 庄秋慧[2] 李大琪[1] 陈刚[1] 余德明[1] 刘定权[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]重庆理工大学电子信息与自动化学院,重庆400050

出　　处：《光学学报》2012年第10期277-280,共4页Acta Optica Sinica

摘　　要：在短波红外区域(1～3μm),硅薄膜材料因其具有折射率高、透明性好、膜层应力易匹配等诸多优点而得到广泛应用。基于改进后的Sellmeier模型拟合出了制备的硅薄膜的短波红外光学特性,以此为基础,选用硅和二氧化硅两种材料,设计并制备出中心波长在1.30μm,相对带宽2.46%的带通滤光片。利用了硅薄膜在波长小于1.0μm波段的吸收特性较好地扩展了带外截止范围。测量结果表明,具有2个谐振腔的带通滤光片峰值透射率达到85.8%,半功率带宽控制在约32nm,带外截止范围覆盖了波长小于1.75μm的光谱区域。Silicon material can be used as optical thin films in short-wave infrared （1-3 μm） range, because of its characteristics such as high refractive index, good transparence, easy to match with other layers. Using advanced Sellmeier model, the optical characteristics of silicon thin films have been fitted and calculated. Based on the result, silicon and silicon dioxide are selected as layer materials, and a bandpass filter is designed and fabricated. The center wavelength is about 1.30 μm; the filter with 2 cavities has 32 nm bandwidth and 85.8% transparence at the peak. Combining silicon layers＇ high absorption at wavelengths smaller than 1.0 μm, the cut-off range can cover the spectrum range smaller than 1.75 μm.

关 键 词：薄膜 光学特性 带通滤光片 短波红外 

分 类 号：O484.4[理学—固体物理]