Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser  

作　　者：金嘉亮 王磊 何建军 

机构地区：[1]State Key Laboratory of Modern Optical Instrumentation,Center for Integrated Optoelectronics,Department of Optical Engineering,Zhejiang University

出　　处：《Chinese Optics Letters》2012年第10期71-74,共4页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 60788403);the Natural Science Foundation of Zhejiang Province (No. Z1110276)

摘　　要：Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.

关 键 词：LASERS Semiconductor lasers SWITCHING 

分 类 号：TN248.4[电子电信—物理电子学]