工艺参数对Ar^+改性无氧铜表面形貌及二次电子发射的影响  

Surface Modification of Oxygen Free High Conductive Copper and Its Secondary Electron Emission Characteristics

作　　者：刘腊梅[1,2] 赵世柯[1] 

机构地区：[1]中国科学院电子学研究所,北京100190 [2]中国科学院研究生院,北京100039

出　　处：《真空科学与技术学报》2012年第10期861-866,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金重点项目(No.60931001)

摘　　要：为了降低材料的二次电子发射系数,本文对高导电无氧铜(OFHC,简称无氧铜)进行离子束表面改性处理,并研究其最优工艺条件,重点考查了温度、时间等工艺参数对表面形貌以及二次电子发射系数(δ)的影响。利用扫描电镜、能谱仪等对表面形貌及成分进行分析并在此基础上对改性后样品的表面形貌形成机理进行了初步探讨。实验得出最佳工艺为:在600℃下离子束改性处理1 h。该参数下处理的无氧铜样品的二次电子发射系数降低63.5%。The surfaces of the oxygen free high conductive（OFHC） copper were modified with argon ion sputtering to lower its secondary electron emission coefficient, δ. The impacts of the modification conditions, including the temperature, ion energy and sputtering time, on the secondary electron emission were evaluated. The microstructures of the surface modified OFI-IC copper were characterized with scanning electron microscopy and energy dispersive spectroscopy. The resuits show that the surface modification under optimized conditions significantly lowers the emission coefficient δ. For example,at 600℃ and sputtered for 1 h, δ was found to decrease by 63.5%, possibly because of the surface roughening caused by argon ion sputtering.

关 键 词：无氧铜 离子束表面改性处理 二次电子发射系数 表面形貌 

分 类 号：O462.2[理学—电子物理学]