气相沉积聚合法制备聚酰亚胺绝缘薄膜及其性能研究  

Microstructures and Property Characterization of Polyimide Films Coated by Vapor Deposition Polymerization

作　　者：郑灼勇[1] 张永爱[1] 张志坚[1] 陈景水[1] 郑隆武[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《真空科学与技术学报》2012年第10期937-942,共6页Chinese Journal of Vacuum Science and Technology

基　　金：福建省教育厅资助项目(JA09017;JA11014);国家自然科学基金项目(61106053)

摘　　要：以联苯四酸二酐和4,4’-二氨基二苯醚为单体原料使用气相沉积聚合(VDP)法制备了聚酰亚胺(PI)绝缘膜,分析不同热亚胺化处理温度对PI薄膜绝缘性能的影响。分别使用红外光谱、俄歇能谱、扫描电镜、原子力显微镜对薄膜成分以及薄膜表面形貌进行了表征;利用超高阻微电流测试仪测试了PI复合绝缘膜漏电流和电压击穿特性。结果表明:热亚胺化300℃/1 h真空(1.0×10-2Pa)处理后的PI绝缘膜内部结构致密,当场强为8.0MV/cm时漏电流密仅为8.2×10-5A/cm2;薄膜击穿场强达到8.42MV/cm,表明PI薄膜具有良好的电学性能以及热稳定性。The polyimide （PI） coatings were grown by vapor deposition polymerization （VDP） with biphenylte- tracarboxylic dianhydride and 4,4＇-diaminediphenyl ether as the reactive monomers. The influencing growth factors, in- cluding the thermal imine temperature, pressure, and etc., were evahmted. The micmstructures and properties of the P] films were characterized with Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, and atomic force microscopy. The results show that the PI film has good elec- trical properties and high thermal stability. For instance, after thermal irnine processing at 300℃ for 1 hour at a pressure of 1.0 × 10-2 Pa, the fairly compact insulating PI membrane displays a high breakdown voltage, 8.42 MV/cm, and a low leakage current, 8.2 × 10 - 5 A/cm2, at a field of 8.0 MV/cm.

关 键 词：气相沉积聚合 聚酰亚胺绝缘膜 击穿场强 漏电流密度 

分 类 号：TN383[电子电信—物理电子学]