Research on VOx uncooled infrared bolometer based on porous silicon  

作　　者：Bin WANG lianjun LAI Erjing ZHAO Haoming HU Sihai CHEN 

机构地区：[1]School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China [2]Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China

出　　处：《Frontiers of Optoelectronics》2012年第3期292-297,共6页光电子前沿（英文版）

摘　　要：In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VOx has been investigated by X-ray diffractometer （XRD） and atomic force microscopy （AFM） in detail. XRD test indicates that this film is composed of V203, V305 and VO2.VOx microbolometer with infrared （IR） absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8-14μm, has maximum detectivity of 1.09×109cm.Hz]/2/W at 24Hz frequency and 9.81aA bias current.In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VOx has been investigated by X-ray diffractometer （XRD） and atomic force microscopy （AFM） in detail. XRD test indicates that this film is composed of V203, V305 and VO2.VOx microbolometer with infrared （IR） absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8-14μm, has maximum detectivity of 1.09×109cm.Hz]/2/W at 24Hz frequency and 9.81aA bias current.

关 键 词：infrared （IR） porous silicon microbolometer micromachining 

分 类 号：TN215[电子电信—物理电子学] O484.1[理学—固体物理]