Transfer matrix modeling of avalanche photodiode  

作　　者：Saeed OLYAEE Mohammad SOROOSH Mahdieh IZADPANAH 

机构地区：[1]Nano-Photonics and Optoelectronics Research Laboratory, Faculty of Electrical and Computer Engineering, Shahid Rajaee Teacher Training University (SRTTU), Lavizan 16788, Iran [2]Engineering Faculty, Shahid Chamran University, Ahvaz 61355-158, Iran

出　　处：《Frontiers of Optoelectronics》2012年第3期317-321,共5页光电子前沿（英文版）

摘　　要：In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distributed model was presented for calculating impact ionization （I2） and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs＇ behavior and interpreting their experimentally measured characteristics.In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distributed model was presented for calculating impact ionization （I2） and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs＇ behavior and interpreting their experimentally measured characteristics.

关 键 词：avalanche photodetector （APD） impact ioni-zation （I2） transfer matrix method （TMM） 

分 类 号：TN364.2[电子电信—物理电子学] O734[理学—晶体学]