PL Emission and Shape of Silicon Quantum Dots  

作　　者：Zhong-mei Huang1 Xin-jian Miao1 Wei-qi Huang1 Han-qiong Cheng1 Qin Shu1 Shi-rong Liu2 Chao-jian Qin2 (1Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang ,Guizhou 550025,China 2State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang ,Guizhou 550003,China) 

出　　处：《贵州科学》2012年第5期6-11,共6页Guizhou Science

基　　金：Support from the National Natural Science Foundation of China (Grant No.60966002,11264007);the National Key Laboratory of Surface Physics in Fudan University

摘　　要：The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-0-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.About The Author： Zhong-Mei Huang,Master in Guizhou University.

关 键 词：Si quantum dots Curved surface effect Surface bonds Localized levels PACS numbers: 42.55.-f 68.65.Hb 78.45.+h 78.55.Mb 

分 类 号：O613.72[理学—无机化学]