New Conception of Nano-laser on Silicon Nanostructures  

作　　者：Xin-jian Miao1 Zhong-mei Huang1 Wei-qi Huang1 Shi-rong Liu2 Chao-jian Qin2 Quan Lü1 (1Institute of Nanophotonic Physics, Key Laboratory of Photoelectron technology and application, Guizhou University,Guizhou Guiyang 550025,China 2State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciencees, Guiyang,Guizhou 550003,China) 

出　　处：《贵州科学》2012年第5期12-18,共7页Guizhou Science

基　　金：Support from the National Natural Science Foundation of China ( Grant No.10764002,60966002,11264007);the National Key Laboratory of Surface Physics in Fudan University

摘　　要：A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states produced from the surface bonds. The nano-laser belongs to the emission of type Ⅱ. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of nano-clusters (d<3 nm) can make the localized states into band gap below the conduction band opened and the states of conduction band become the pumping level of nano-laser. The emission energy of nano-laser will be limited in the range of 1.7～2.3 eV generally due to the position of the localized states in gap, which is good in agreement between the experiments and the theory.A new conception of nano-laser is proposed in which depending on the size of nano-clusters （ silicon quantum dots （QD） ）, the pumping level of laser can be tuned by the quantum confinement （Qc） effect, and the population inversion can be formed between the valence band and the localized states produced from the surface bonds. The nano-laser belongs to the emission of type II. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of nano-clusters （ d 〈 3 nm） can make the localized states into band gap below the conduction band Opened and the states of conduction band become the pumping level of nano-laser. The emission energy of nano-laser will be limited in the range of 1.7 - 2.3 eV generally due to the position of the localized states in gap, which is good in agreement between the experiments and the theory.

关 键 词：NANO-LASER quantum dots pumping level localized states PACS numbers: 78.55.Mb 78.45.+h 

分 类 号：O613.72[理学—无机化学]