一种改进的高功率GaN放大电路设计方法  

An Improved Design Method of High Power GaN Amplifiers

作　　者：杨丽[1] 马健[1] 

机构地区：[1]西南民族大学电气信息工程学院,成都610041

出　　处：《微波学报》2012年第5期89-92,共4页Journal of Microwaves

基　　金：中央高校基本科研业务费专项资金(11NZYQN04)

摘　　要：传统的功率放大器设计,大都将功率管设计在绝对稳定的状态,再进行匹配电路的设计,这样可以避免振荡的发生,但是同时也会减小放大器的增益,降低1dB压缩点的输出功率。本文提出了一种改进的放大电路设计方法,提出在潜在振荡条件下详细分析振荡区域,准确设计匹配电路,使匹配阻抗避开振荡区域,从而在保证放大器稳定工作的同时,能够提高增益和输出功率。这种方法首次应用于GaN HEMT功率放大器的设计,并且取得了很好的效果。In the common method of high power amplifier design, the device is set to the state of absolute stability. However, this method will decrease the gain and maximal output power of the device. In this paper, an improved design method is proposed and validated which could ensure both of the stability and gain of the circuit. The improved method is used in the design of a GaN HEMT high power amplifier firstly and the measured results show that the method is correct and practical.

关 键 词：绝对稳定 潜在振荡 匹配电路 smith阻抗圆图 

分 类 号：TN721[电子电信—电路与系统]