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作 者:李志永[1,2] 谭荣清[1] 徐程[1,2] 李琳[1,2] 黄伟[1,2]
机构地区:[1]中国科学院电子学研究所高功率气体激光技术部,北京100190 [2]中国科学院研究生院,北京100049
出 处:《光电子.激光》2012年第11期2168-2173,共6页Journal of Optoelectronics·Laser
摘 要:为了消除Rb蒸气室窗口内表面未镀膜引起的吸收率测量误差,本文提出采用差分吸收的方法准确测量高气压缓冲气体下Rb蒸气对780nm激光的吸收率,参考光源为787nm单管半导体激光器(LD)。吸收峰的测量,则通过观察780nm激光通过Rb蒸气室后激光光谱出现的凹陷确定。采用本文方法对充有252.5kPa He气和50.5kPa CH4缓冲气体的Rb蒸气的吸收率和吸收峰进行了测量,验证了该方法具有较高的测量精度。An accurate measurement method for Rb vapor's abosrptivity and absorptive peak to 780 nm laser with narrow linewidth under high-pressure buffer gas is proposed. Based on the principle of differ- ential absorption,a single laser diode (LD) with central wavelength of 787 nm is used as a reference beam source to eliminate the error of absorptivity brought by the Rb vapor cell's uncoated irmer-sur faces. The absorptive peak is measured through the dip of the spectra observed after 780 nm laser trans- mitted through the Rb vapor cell. Higher accuracy of this method is verified by the measurement of the absorptivity and absorptive peak for the Rb vapor with buffer gases of 252. 5 kPa He and 50. 5 kPa methane.
关 键 词:半导体激光泵浦碱金属蒸气激光(DPAL) Rb蒸气激光 吸收率 差分吸收 吸收峰
分 类 号:TN248.2[电子电信—物理电子学]
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