碳化硅晶须对C/C复合材料表面SiC涂层的影响  

Effect of silicon carbide whiskers on SiC coating of C/C composites

作　　者：谭周建[1,2] 李军[1,2] 张翔[1,2] 李丙菊[1,2] 褚胜林[1] 廖寄乔[1,2] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083 [2]湖南金博复合材料科技有限公司,益阳413000

出　　处：《粉末冶金材料科学与工程》2012年第5期664-668,共5页Materials Science and Engineering of Powder Metallurgy

基　　金：国家高技术研究发展计划资助项目(2012AA03A207);国家自然科学基金委员会创新研究群体科学基金(51021063)资助项目

摘　　要：以三氯甲基硅烷(CH3SiCl3,MTS)为先驱体原料,采用化学气相沉积法(CVD)在C/C复合材料表面原位生长碳化硅晶须(SiCw)及制备SiC涂层,研究SiCw对SiC涂层微观形貌,织构及力学性能的影响。结果表明:SiCw不仅可促成SiC等轴颗粒的细化、生长完善,裂纹宽度减小、偏转明显,而且可使涂层的织构发生改变;同时,大量的空洞在SiCw处形成,使得内层SiC涂层硬度低于外层,从而导致整个SiC涂层的硬度和弹性模量降低。The in-situ SiCw（silicon carbide whiskers） and SiC coating were deposited on the surface of carbon/carbon composites by chemical vapor deposition（CVD） using methyltrichlorosilane（MTS） as precursor.The effect of SiCw on the microstructure,texture and mechanic properties of SiC coating was investigated.The results show that well-rounded and fine equiaxial-like SiC particles are promptly formed,the crack width and orientation in the coating are changed,and the texture is adjusted;meanwhile,the hardness of inner-coating of SiC is lower than that of the outer and the lower hardness and lesser elastic modulus of the coating are caused by a great number of cavities in the in-situ SiCwarea.

关 键 词：碳化硅晶须 C/C复合材料 SIC涂层 力学性能 

分 类 号：TB332[一般工业技术—材料科学与工程]