Structural and optical properties of ZnO films prepared by ion beam sputtering  

作　　者：吴慎将 苏俊宏 王稳奇 

机构地区：[1]North Institute of Information Engineering,Xi'an Technological University [2]Key Laboratory of Film Technology and Optical Measurement,Xi'an Technological University

出　　处：《Optoelectronics Letters》2012年第6期449-452,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60978040and61205155);the Science and Technology Projects in Xi'an(No.CXY1015-2)

摘　　要：Based on the ion beam sputtering deposition technology,ZnO thin films are deposited on the glass substrate.The four-factor and three-level L 9(34)orthogonal experiment is used to obtain the best technological parameters of the deposited ZnO thin films,which are the discharge voltage of 3.5 kV,the oxygen current capacity of 8 sccm,the coil current of 8 A and the distance between target and substrate of 140 mm.The purity of the deposited ZnO thin film is 85.77%,and it has good crystallization in orientation.The experimental results show that research and development of the ion beam sputtering source are advanced,and the ion beam sputtering deposition technology can be used to deposit the orientation preferred thin films with good performance.

关 键 词：DEPOSITS Optical films Optical properties SUBSTRATES 

分 类 号：TN304.055[电子电信—物理电子学]