Ni^(2+)对KDP晶体生长及缺陷影响的研究  

Study on the Effects of Ni^(2+) on the Growth and Defects of KDP Crystals

作　　者：柴向旭[1] 王波[1] 王圣来[1] 孙洵[1] 顾庆天[1] 丁建旭[1] 李毅平[1] 许心光[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2012年第5期1153-1157,共5页Journal of Synthetic Crystals

基　　金：高等学校博士学科点专项科研基金资助课题(20090131120035);山东大学自主创新基金资助(2010TS067)

摘　　要：采用传统降温方法生长了不同Ni2+掺杂浓度的KDP晶体。实验发现当Ni2+掺杂浓度小于1000 ppm时溶液的稳定性随着掺杂浓度的增加而提高,大于1000 ppm时溶液的稳定性开始下降,但仍高于纯态溶液的稳定性;随着Ni2+浓度的增加KDP晶体柱面的生长死区增加,柱面的生长速度略有下降,但在生长过程中没有观察到晶体的楔化;KDP晶体的XRD分析及缺陷的研究表明Ni2+对晶体的结构影响不明显,但晶体中的缺陷和内应力增加。In this paper,KDP crystals were grown with different concentrations（0 ppm-20000 ppm） of Ni2＋ by traditional temperature cooling method.The result indicates that when the concentration of Ni2＋ is less than 1000 ppm,the solution stability increases as the Ni2＋concentration increasing to some extent.However,when the Ni2＋ concentration is more than 1000 ppm,the solution stability reduces gradually,which is still higher than pure solution.As the Ni2＋concentration increasing,the dead zone of（100） face enlarges,and the growth rate of prismatic faces becomes lower.But KDP crystals＇ tapering is not obvious.The XRD analysis of KDP crystals with different concentrations of Ni2＋ shows that Ni2＋ has no obvious effect on the crystal structure.But the defects and stress of KDP crystals with Ni2＋ dopant increase.

关 键 词：KDP晶体 溶液稳定性 缺陷 内应力 

分 类 号：O781[理学—晶体学]