直流电弧等离子体喷射CVD硼掺杂金刚石薄膜的制备及电化学性能研究  

Electrochemical Properties of Boron Doped Diamond Films Prepared by DC Arc Plasma Jet CVD

作　　者：张聪聪[1,2] 戴玮[3] 朱宁[1,2] 尹振超[1,2] 吴小国[1,2] 曲长庆[1,2] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384 [2]天津理工大学天津市薄膜电子与通信器件重点实验室,天津300384 [3]天津大学精密仪器与光电子工程学院,天津300072

出　　处：《人工晶体学报》2012年第5期1205-1210,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(50972105);天津市重大科技攻关资助项目(06YFGZSH00300)

摘　　要：采用直流电弧等离子体喷射CVD(Chemical Vapor Deposition)法在硅(100)衬底上制备了(111)占优的掺硼金刚石(BDD)薄膜,研究了压强对薄膜生长的影响,在压强为5500 Pa时得到了(100)占优的金刚石薄膜,并用SEM、XRD及拉曼光谱分析了薄膜的表面形貌、晶体结构、薄膜品质。测试结果表明,掺硼金刚石膜具有较好的成膜质量。霍尔测试表明BDD的电阻率为0.0095Ω.cm,载流子浓度为1.1×1020cm-3;研究了BDD薄膜电极在硫酸钠空白底液、铁氰化钾/亚铁氰化钾溶液和多巴胺溶液中的循环伏安曲线(CVs),发现该金刚石薄膜电极在硫酸钠中具有较宽的电化学窗口(约为4 V)、接近零的背景电流和良好的可逆性,利用BDD电极检测多巴胺溶液,具有明显的氧化还原峰值和较好的稳定性。结果表明利用该方法制备的BDD电极在电化学检测方面具有明显的优势。Boron doped diamond films on silicon（BDD） substrates were deposited by DC ARC Plasma Jet CVD（Chemical Vapor Deposition）,SEM,XRD and Raman spectroscopy were employed to analyze the morphology,crystal structure and film quality.The SEM and XRD show jointly that the samples are high-quality polycrystalline diamond films composed of micro meter-sized grains.The Raman spectrum show the 1126 cm-1,1336 cm-1and 1560 cm-1.respectively corresponds to peak due to boron incorporation,sp3 carbon peak,and sp2 carbon peak.Study the effects of pressure and（100）BDD films were deposited at the pressure of 5500 Pa.The resistivity and carrier concentration of the（111）films measured by the Hall system,respectively corresponds to 0.0095 Ω · cm and 1.1×1020 cm-3.The electrochemical behaviors of the boron-doped diamond film electrode in sodium sulfate solution,potassium ferrocyanide/potassium ferricyanide solution and dopamine solution are studied.The results show that the diamond film electrode have a wide electrochemical window of about 4 V and a low background current close to zero in the aqua solution,meanwhile they have a high sensitivity,good stability and reversibility in the dopamine detection experiment which makes boron-doped diamond film obtained by DC ARC Plasma Jet CVD being an excellent material of electrochemical electrode.

关 键 词：直流电弧等离子喷射CVD 硼掺杂金刚石(BDD) 循环伏安法 多巴胺 

分 类 号：O484[理学—固体物理]