界面效应调制忆阻器研究进展  

Progress of memristor modulated by interfacial effect

作　　者：贾林楠[1] 黄安平[1] 郑晓虎[1] 肖志松[1] 王玫[1] 

机构地区：[1]北京航空航天大学物理系,北京100191

出　　处：《物理学报》2012年第21期432-442,共11页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:51172009;51172013;11074020);教育部新世纪优秀人才计划(批准号:NCET-08-0029);高性能陶瓷和超微结构国家重点实验室开放课题基金(批准号:KL201209SIC)资助的课题~~

摘　　要：忆阻器因其优异的非易失存储特性,且具有结构简单、存储速度快、能耗低、集成度高等优势,在新型电子器件研究领域引起了广泛关注.本文从忆阻器结构出发,对忆阻器主要材料、机理等进行了综述,介绍了忆阻器在电子电路及人工智能等领域的研究进展,重点讨论了界面效应对忆阻行为及性能改善等方面的重要作用,提出了界面纳米点嵌入结构对优化忆阻性能的显著效果,并分析了忆阻器可能的发展趋势.Because of its excellent non-volatile storage characteristics, simple structure, fast storage, low energy consumption and high integration, memristor has aroused a widespread interest in the field of new electronic devices. In this paper, metal-insulator-metal stack of memristor is introduced and relative memristive material, its mechanism as well as the application in the field of electronic circuits and artificial intelligence are summarized. The significant role of interracial effects on memristive behavior and improvement of its performance is emphasized on. Especially, the effects of interface nanodots on the optimization of memristor properties are proposed. The research prospects of memristor are also analyzed and discussed.

关 键 词：忆阻器 忆阻机理 界面效应 非易失存储 

分 类 号：TM501[电气工程—电器]