LED对MM和HBM静电放电敏感性的研究  

Research on LED Sensitivity to the MM and HBM ESD Stress

作　　者：涂辛雅 季军[2] 郑益民[2] 潘建根 

机构地区：[1]浙江省半导体照明测试系统工程技术研究中心,杭州310053 [2]杭州远方仪器有限公司,杭州310053

出　　处：《半导体技术》2012年第11期894-899,共6页Semiconductor Technology

摘　　要：为研究机器模式(MM)及人体模式(HBM)静电放电试验对LED特性的影响,参考国际标准对半导体元件的静电放电测试要求,对LED样品分别进行MM及HBM静电放电试验。每次静电测试前后均对样品进行光电参数测试,观察样品光电参数的变化,并以此作为判别LED失效的依据。通过实验,研究对比MM静电放电和HBM静电放电试验对LED特性的影响,并从理论上探讨了相关失效机理。实验表明无论是MM静电放电还是HBM静电放电,均会造成LED反向漏电流增大,正向I-V特性"收缩",光通量一定程度的衰减。但是在静电敏感电压上有差别较大,MM静电失效电压远低于HBM静电失效电压。In order to study the influence of the machine model（MM） and human body model（HBM）electrostatic discharge（ESD） on LEDs,the MM and the HBM ESD stress immunity of LEDs were tested according to the requirements on semiconductor device in international standards.The failure of LEDs was determined by the measurement of the electrical and optical characteristics of the LEDs after ESD stress.Based on the comparison between the experiments of the MM and the HBM ESD on LEDs,the ESD failure mechanism was analyzed.Experiment results show that the MM and the HBM ESD lead to similar impact to LED characteristic,including reverse leakage current increase,forward I-V characteristic shrink and luminous flux attenuation.But the electrostatic sensitive voltage difference is larger,the ESD failure voltage of MM ESD is far lower than that of HBM.

关 键 词：静电放电 机器模式 人体模式 发光二极管 反向漏电流 光通量 

分 类 号：TN364.2[电子电信—物理电子学]