真空烧结对高压厚膜型ZnO压敏陶瓷的影响  

INFLUENCE OF VACUUM SINTERING ON THE PROPERTIES OF HIGH VOLTAGE ZNO-BASED THICK FILM VARISTORS

作　　者：柯磊[1] 马学鸣[2] 

机构地区：[1]上海电机学院,数理研究所,上海201306 [2]华东师范大学物理系,精密光谱科学与技术国家重点实验室,上海200241

出　　处：《中国陶瓷》2012年第10期6-9,共4页China Ceramics

基　　金：国家自然科学基金资助项目(No.10804071);上海高校青年教师培养资助计划项目(12AZ16);上海电机学院校立基金项目(11C409/2012YBJYJG)

摘　　要：采用真空烧结的方法制备出高电位梯度的厚膜型ZnO压敏陶瓷,并研究了多次真空烧结对高压厚膜型ZnO压敏陶瓷的影响。实验结果表明,多次真空烧结使试样的电学性能产生先劣化后优化的变化趋势。真空烧结5次后,试样的电位梯度为2890.9V/mm,漏电流为87.9μA,非线性系数为9.0,晶粒尺寸在2μm左右。晶粒中氧原子百分含量的降低表明真空烧结5次后,晶粒、晶界间发生了氧原子的转移,使试样宏观电学性能得到改善。High voltage ZnO-based thick film varistors were prepared by vacuum sintering. The effect of vacuum sintering on phase composition, microstructure and electrical properties of the thick film samples were investigated. Experimental results show that the electrical properties began to deteriorate after vacuum sintering for 2 times and were greatly improved for 5 times.The value of voltage gradient, leakage current, nonlinear exponent and average grain size were 2890.gV/mm, 87.9μA, 9.0 and - 2μm, respectively.The notable decrease of oxygen atoms in ZnO grains after vacuum sintering for 5 times, which caused the transfer process of oxygen atoms between grains and grain boundaries, was the origin for the improvement in electrical properties.

关 键 词：ZNO压敏陶瓷 真空烧结 电位梯度 厚膜 

分 类 号：TM283[一般工业技术—材料科学与工程]