栅控横向PNP双极晶体管电离辐射效应  

Radiation Effect of Gate Controlled Lateral PNP BJTs

作　　者：席善斌[1,2,3] 陆妩[1,2] 任迪远[1,2] 王志宽[4] 周东[1,2,3] 文林[1,2] 孙静[1,2] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院大学,北京100049 [4]模拟集成电路国家重点实验室,重庆400060

出　　处：《核技术》2012年第11期827-832,共6页Nuclear Techniques

基　　金：国家自然科学基金资助项目(No.10975182)资助

摘　　要：设计并制作了一种栅控横向PNP双极晶体管测试结构,将其与相同工艺条件下制作的常规横向PNP双极晶体管封装在同一管壳内。在相同条件下对两种器件进行60Co-γ辐照效应和退火特性研究。结果发现,栅控和常规双极晶体管在基极电流、集电极电流、过剩基极电流和归一化电流增益方面,对电离辐射响应高度一致。对栅控横向PNP双极晶体管辐照感生电荷进行了定量分离,研究国产栅控横向PNP双极晶体管辐照感生缺陷的定量变化就可以客观、科学地反应国产常规横向PNP双极晶体管辐照感生电荷变化。Design and fabricate a new test structure of bipolar device： the gate controlled later PNP bipolar transistor （GCLPNP BJT）, then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then ^60Co-γ radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor.

关 键 词：PNP双极晶体管 60Co-γ辐照 辐照感生电荷 电荷分离 

分 类 号：TN322.8[电子电信—物理电子学]