Mn^+离子注入GaAs的铁磁性质和结构  

Ferromagnetic Properties and Structure of Mn^+ Ion\|Implanted G)s\+*

作　　者：蔡明[1] 陈辰嘉[1] 王学忠[1] 许世发 丁晓民[1] 张铭 孙允希[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《Journal of Semiconductors》2000年第9期872-876,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助课题 !(编号 :1 9874 0 0 5)&&

摘　　要：报道 Mn+ 离子注入 ( 0 0 1 ) Ga As后经快速退火形成的亚微米铁磁晶粒的性质和结构特性 .磁化强度测量结果显示室温下具有铁磁性 .用透射电子显微镜、X射线能谱和电子衍射分析表明除形成 Mn Ga晶粒外 ,还有含少量 Ga的 Mn As晶粒 .原子力显微镜和磁力显微镜的结果表明在 750— 90Submicron ferromagnets have been successfully incorporated into the semi\|in sulating (001) G)s crystals by Mn + ion implantation and subsequent rapid anne al ing. Magnetization measurements reveal the room\|temperature ferromagnetism. Th e stru ctural and compositional properties of crystallites have been analyzed by transm ission electron microscopy, energy dispersive X\|ray spectroscopy and electron diffraction. The results show that crystallites of MnGa and MnAs with a small amount of Ga are formed. Images under the atomic force microscopy and magnetic force microscopy indicate that the single\|domain magnetic state is dominant in submicron f erromagnets under our annealing conditions (750—900℃).

关 键 词：铁磁性 离子注入 Mn^+ 砷化镓 

分 类 号：TN304[电子电信—物理电子学]