污秽绝缘子闪络特性试验研究  

Study on flashover characteristics of contaminated insulators

作　　者：彭波[1] 周卫华[1] 汤美云[2] 黄福勇[1] 

机构地区：[1]湖南省电力公司科学研究院,湖南长沙410007 [2]湖南省电力公司,湖南长沙410007

出　　处：《湖南电力》2012年第5期1-6,共6页Hunan Electric Power

摘　　要：通过EMTP仿真分别获取0.5/5μs和2.6/50μs绝缘子串反击和绕击条件下的电压波形,并选取电阻-电容隔离回路作为工频回路与冲击电压发生器的隔离电路,同时确定污秽绝缘子制备方法和湿润方式。通过试验,得到在0.5/5μs和2.6/50μs两种冲击电压波形条件下,污秽绝缘子在工频叠加冲击时闪络电压变化的基本规律。Both 0.5/5μs and 2.6/50μs waveform was chosen to as the shielding failure and back flash overvoltage waveform respectively through EMTP simulation,and the resistance-capacitor circuit was selected to as the separated circuit of power frequency circuit and impulse voltage generator.The preparation of contaminated insulators and wetting methods were determined at the same time based on the measurements above.Through the test,the basic law of flashover voltage of contaminated insulator string was acquired at power frequency superposition impulse voltage under both 0.5/5μs and 2.6/50μs waveform.

关 键 词：污秽绝缘子 闪络特性 隔离回路 工频叠加冲击 

分 类 号：TM85[电气工程—高电压与绝缘技术]