具有光敏下陷包层的B/Ge共掺光敏光纤的研制  

Fabrication of B/Ge Co-doped Photosensitive Fiber with Strong Photosensitive Depressed Inner Cladding

作　　者：龚岩栋[1] 关雅莉[1] 简水生[1] 

机构地区：[1]北方交通大学光波技术研究所,北京100044

出　　处：《压电与声光》2000年第4期222-224,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目!(69977003)

摘　　要：紫外光纤光栅的包层模造成的损耗限制了光栅在波分复用系统中的使用。文章分析了同时具有下陷内包层和光敏内包层的光敏光纤可以极大地抑制包层模耦合，并采用 ＭＣＶＤ工艺制作出了硼和锗共掺（Ｂ／Ｇｅ）的带光敏的下陷内包层的光纤，经写入紫外光纤光栅证实该光敏光纤确实极大地抑制了包层模耦合。Cladding mode coupling loss of UV rays written grating will limit wide use of grating in WDM system. This paper proposed a novel photosensitive fiber design that have depressed cladding and photosensitive cladding in the same fiber, which can suppress cladding coupling loss drastically. Finally, we used the Only (modified chemical dapor veposition (MCVD)technique to fabricate out B/Ge Co-doped fiber with depressed cladding which was also doped in B and Ge in some ratio, and the transmission spectral of UV rays written grating in it by phase mask method verified the suppression of cladding mode coupling.

关 键 词：光纤 光栅 光敏性 包层模 耦合 

分 类 号：TN253[电子电信—物理电子学]