(Zn,Nb)掺杂SnO_2压敏材料的电子特性  

Electrical Properties of (Zn,Nb)-doped SnO_2 Varistor System

作　　者：王勇军[1] 陈洪存[1] 王矜奉[1] 董火民[1] 张沛霖[1] 钟维烈[1] 

机构地区：[1]山东大学物理系,济南250100

出　　处：《压电与声光》2000年第4期259-261,共3页Piezoelectrics & Acoustooptics

基　　金：山东省自然科学基金资助项目

摘　　要：依据缺陷势垒模型选取Ｚｎ２＋和Ｎｂ５＋复合掺杂的ＳｎＯ２陶瓷进行研究，测量了材料的密度、失重率等物理性质和非线性系数、电流－电压（Ｉ－Ｖ）关系曲线等电子性质。利用低电流区电流密度与电场（ｌｏｇＪ－Ｅ）的线性关系定性地讨论了势垒高度与非线性之间的关系。The physical properties such as density and weight loss and electrical properties such as nonlinear coefficient and I-V characteriatic of (Zn,Nb)-doped SnO2 varistors were investigated in this paper. In addition,the relationship between log J and E1/2 in the low current density region was analyzed and the barrier heights of samples were qualitatively discussed. There exists an agreement between results of physical and electrical properties.

关 键 词：压敏材料 缺陷势垒模型 二氧化锡 掺杂 

分 类 号：TN304.21[电子电信—物理电子学]