正脉冲电镀法制备φ33mm模拟镍源  

Preparation of φ33 mm Simulative Source of Nickel With Pulse-Plating Technology

作　　者：胡睿[1] 阚文涛[1] 董文丽[1] 罗顺忠[1] 钟正坤[1] 杨玉青[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《原子能科学技术》2012年第B09期174-179,共6页Atomic Energy Science and Technology

摘　　要：mA量级直流恒流电源具有过保护电压较低的缺点,不适于制作大面积、高活度63 Ni放射源。本文以正脉冲电源为解决方案,系统研究在简单组分的镀镍溶液中,各工艺条件对电镀结果的影响。研究结果表明,在阴极电流密度为18mA/cm2、室温、脉宽80%、频率5kHz条件下电镀2.5h,可获得95%以上的58 Ni沉积率。The DC constant current power with a magnitude of milliampere has one defect of lower protect voltage.This brought itself not suitable for the preparation of large area and high radioactivity 63Ni.Based on a positive pulse power,the effects from some experiment conditions on the plating results in the simple plating solution were studied.The result shows that 95% of 58Ni deposition rate is gained under the condition of cathode current density of 18 mA/cm2,room temperature,pulse width of 80%,frequency of 5 kHz and plating time of 2.5 h.

关 键 词：脉冲电镀 58Ni 沉积率 

分 类 号：TL99[核科学技术—核技术及应用] TM910.2[电气工程—电力电子与电力传动]