CdSe胶质量子点的电致发光特性研究  

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

作　　者：楼腾刚[1] 胡炼[1] 吴东锴[1] 杜凌霄[1] 蔡春锋[1] 斯剑霄[2] 吴惠桢[1] 

机构地区：[1]浙江大学物理学系,硅材料国家重点实验室,杭州310027 [2]浙江师范大学物理系,金华321004

出　　处：《无机材料学报》2012年第11期1211-1215,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(10974174,91021020);浙江省自然科学基金项目(Z6100117,Y1110563)~~

摘　　要：采用胶体化学法合成硒化镉(CdSe)胶质量子点,在此基础上制成了以CdSe胶质量子点为有源层,结构为ITO/ZnS/CdSe/ZnS/Al的电致发光(EL)器件.透射电镜测量表明量子点的尺寸为4.3 nm,扫描电子显微镜测量ZnS薄膜和Al薄膜结果显示表面均较为平整,由器件结构的X射线衍射分析观察到了CdSe(111)、ZnS(111)等晶面的衍射,表明器件中包含了CdSe量子点和ZnS绝缘层材料.光致发光谱表征胶质量子点的室温发光峰位于614 nm,电致发光测量得到器件在室温下的发光波长位于450～850 nm,峰值在800 nm附近.本文对电致发光机制及其与光致发光谱的区别进行了讨论.Electroluminescent （EL） devices with an ITO/ZnS/CdSe/ZnS/A1 structure were fabricated using chemi- cally synthesized colloidal CdSe quantum dots （QDs） as active layer. The size of the CdSe QDs is about 4.3 nm measured by a transmission electron microscope. Scanning electron microscope characterization shows smooth surfaces of ZnS layers and A1 electrodes. CdSe （111） and ZnS （111） diffraction peaks are observed in the X-ray dif- fraction patterns, verifying the incorporation of CdSe QDs and ZnS insulator materials in the devices. Room tem- perature photoluminescence （PL） spectra reveal that the CdSe QDs＇ emission peak is located at 614 nm. EL meas- urements at room temperature show a broad emission band ranging from 450 nm to 850 nm with a peak wavelength located at about 800 nm. Finally, the light emitting mechanism for the EL devices is proposed and the discrepancy between PL and EL spectra is interpreted

关 键 词：CDSE 量子点 电致发光 光致发光 

分 类 号：O443[理学—电磁学]