一种用电流基准核作温度互补性补偿的基准电压源  

A reference voltage source with complementary temperature compensation by reference current core

作　　者：欧龙振[1] 李琦[1] 刘云[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《桂林电子科技大学学报》2012年第5期364-368,共5页Journal of Guilin University of Electronic Technology

基　　金：广西自然科学基金(2010GXNSFB013054)

摘　　要：为克服传统带隙基准源在温度性能上的缺陷,设计了一种低温度系数的带隙基准电路。该电路在传统电流模基准结构的基础上,引入一个工作在亚阈值区电流基准核产生的电流来达到高阶补偿的目的。在一阶补偿的基础上,补偿电流的进一步补偿,大大降低了基准输出的温度系数。电路设计采用0.18μm的CMOS工艺,利用Cadence软件的Spectre仿真工具对电路进行仿真,仿真结果表明,在2.7V电源电压下,基准输出电压为1.265V,温度在-40～125℃变化时,基准输出电压仅变化0.2mV,相比一阶补偿的变化(约为2.5mV),精度提升了10多倍;电源电压在1.8～3.5V变化时,基准输出电压变化4.5mV;在出色的温度性能下有良好的抗干忧性,满足了高性能基准源的要求。In order to overcome defects of the conventional bandgap reference in temperature performance,a bandgap reference circuit with low temperature coefficient was designed.High-level compensation is achieved in this circuit by introducing a current generated by reference current nuclear working in subthreshold region based on the traditional structure of current-mode bandgap reference.Temperature coefficient was greatly reduced by further compensation of compensatory current based on the first-order compensation.Designed with 0.18 μm standard CMOS process,and simulated with Spectre simulation tools of Cadence,the circuit exhibits a reference voltage 1.265 V with a voltage change only 0.2 mV in the temperature range from-40 to 125 ℃ at 2.7 V supply voltage,compared to the change（about 2.5 mV） of first-order compensation,accuracy of which is improved by 10 times.When supply voltage ranges from 1.8 to 3.5 V,the reference voltage changes 4.5 mV.With the excellent temperature performance and good anti-disturbance,the requirements of high-performance reference are met.

关 键 词：电流模基准源 亚阈值区 电流基准源 电流基准核 温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]