ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征  

Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer

作　　者：张文君[1] 翟保才[1] 许键 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]Department of Engineering Science and Mechanics,Penn State University

出　　处：《发光学报》2012年第11期1171-1176,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61078007);曙光计划(10SG46);上海市科委(1052nm07100;11530502200)资助项目

摘　　要：通过调节作为发光层的量子点的尺寸,可以制作出覆盖可见光(380～780 nm)以及近红外光谱的量子点LED(QD-LED),其光谱范围很窄且半高宽可达30 nm。然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求。为了研究QD-LED器件的特性,本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层,制备了绿光量子点LED,并表征了器件的特性。CdSe/ZnS core-shell QDs（523 nm） were used as emissive layers,poly-TPD as hole-transport layer（HTL） and ZnO as electron-transport layer（ETL）.Green-emitting devices based on CdSe QDs were fabricated and characterized.Luminescence of semiconductor nanocrystal quantum dots（QDs） were used as luminescent centers in organic light emitting devices（OLEDs）.By changing the size of QD,this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum（FWHM） of ~30 nm.However,the brightness,efficiency,and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.

关 键 词：LED 量子点LED 结构 制备 表征 

分 类 号：TN383.1[电子电信—物理电子学]