H_2^+杂质半导体量子点基态能级的量子尺寸效应  

Quantum Size Effects on H_2^+ Impurites Semiconductor Quantum Dot Ground Energies

作　　者：惠萍[1] 

机构地区：[1]广东第二师范学院物理系,广州广东510303

出　　处：《广东第二师范学院学报》2012年第5期38-41,共4页Journal of Guangdong University of Education

基　　金：国家自然科学基金资助项目(10574163);国家自然科学基金资助项目(8151030301000004)

摘　　要：用B样条技术计算H2+杂质半导体量子点基态能级的量子尺寸效应.计算结果显示:当量子点半径R较小时,基态能级E对两核距离D的变化很敏感,E-D曲线上升快;当R较大时,E-D曲线上升变缓,基态能级对D的变化敏感度下降.在R较小的区域,E-R曲线下降较快,量子尺寸效应显著.在R较大的区域,E-R曲线下降速度变缓,量子尺寸效应减弱.Quantum size effects on H2 ＋ impurites semiconductor quantum dot ground energies with Bspline technology have been found. The calculated results show. When quantum dot radia R is small, the quantum dot energy curves E--D rise quickly, and the ground energies are sensitive to distence of the two nucleus D; While R becomes larger, the quantum dot energy curves E--D rise slowly, and the ground energies are not sensitive to D clearly. On the other hand,R is in small region, the quantum dot energy curves E--R decrease quickly with quantum dot radia R increasing, the quantum size effects are clear, while quantum dot radia R becomes larger, the quantum dot energy curves E--R decrease slowly, and the quantum size effects are not clear.

关 键 词：H2+杂质半导体量子点 Born—Oppenheimer近似 B—spline技术 

分 类 号：O562.1[理学—原子与分子物理]