正向氧化电压对ZAlSi12Cu2Mg1微弧氧化膜形成的影响  

Effect of Forward Voltage on Coating Formed of ZAlSi12Cu2Mg1 Alloy by MAO

作　　者：刘彩文[1] 刘向东[1] 

机构地区：[1]内蒙古工业大学材料科学与工程学院,内蒙古呼和浩特010051

出　　处：《热加工工艺》2012年第22期157-158,163,共3页Hot Working Technology

基　　金：铝合金陶瓷气缸的开发与产业化内蒙古科技攻关资助项目(20040202)

摘　　要：通过改变正向氧化电压,对ZAlSi12Cu2Mg1微弧氧化膜的形成进行研究,研究其对微弧氧化膜层特性的影响,并测定了膜层的相组成。结果表明:电压为430 V时,膜层厚度仅65μm,膜层硬度434 HV,在30 min的干摩擦后膜层的磨损量为基体合金的29.86%;电压提高到440 V时,膜厚增到154μm,膜层中含有3Al2O3.2SiO2、SiO2、α-Al2O3、γ-Al2O3和WO3,膜层硬度提高到898 HV,膜层的磨损量仅为基体的12.45%。超过440 V后,膜层厚、硬度及耐磨性均有所下降。The forming of ceramic coating on the surface of ZA1Si2Cu2Mgl by MAO with different forward voltage was investigated. The influences of forward voltage on characteristics of the coating were analyzed respectively. The XRD was employed to analyze phase compositions of coating. The results show that while the forward voltage rises from 430 V to 440 V, the thickness of coating rises gradually from 65 to 154μm, the hardness increase from 434 HV to 898 HV, the mass loss of coating after 30 min decreases from 29.86% to 12.45%, the coating is composed of mullite, SiO2 and a-A12O3 besides a-A12O3. But as the voltage exceeds 440V, the mass loss of the coating ascends while the thickness and hardness decrease.

关 键 词：正向氧化电压 ZALSI12CU2MG1 微弧氧化 

分 类 号：TG174.4[金属学及工艺—金属表面处理]