磁电可调微波器件电调频带漂移模型  

Theory Model of Electric Field Tuning Frequency Shift in Magnetoelectric Tunable Microwave Devices

作　　者：陈晴[1] 周浩淼[1] 邓娟湖[1] 夏哲雷[1] 

机构地区：[1]中国计量学院信息工程学院,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2012年第5期13-16,共4页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(11172285);中国博士后科学基金资助项目(04727;0480089)

摘　　要：针对磁电可调微波器件外加电场可以调节器件频带漂移的现象,该文基于经典层合板理论及Smith-Beljers理论,建立了外电场作用下磁电层合结构铁磁共振频率漂移模型。对PZT/YIG/GGG 3层磁电层合结构,该理论模型可以在定性上有效的预测施加平行和垂直的外磁场时,电调FMR频率漂移方向相反的实验现象,进而为磁电可调微波器件电调频带漂移现象提供了理论基础。For the phenomenon of frequency band shift tuned by electric field in magnetoelectric tunable microwave devices,based on the classical laminated plate theory and the theory of Smith-Beljers,this paper establishes a model of FMR frequency shift in magnetoelectric laminated structure under an applied electric field.For PZT/YIG/GGG trilayered magnetoelectric structure,this model can effectively predicts the experimental phenomena that the FMR frequency shift increases under parallel magnetic while decreases under vertical magnetic.As a result,it provides theoretical basis for the phenomenon of frequency band shift tuned by electric field in magnetoelectric tunable microwave devices.

关 键 词：磁电层合结构 应力 应变 铁磁共振 频率漂移 

分 类 号：TN911[电子电信—通信与信息系统]