掺铕氮化铝薄膜的光致发光研究  

Photoluminescence Properties of Eu-doped AlN

作　　者：张勇[1] 刘文[2] 

机构地区：[1]嘉兴学院数理与信息工程学院,浙江嘉兴314001 [2]深圳大学光电工程学院,广东深圳518060

出　　处：《嘉兴学院学报》2012年第6期70-73,92,共5页Journal of Jiaxing University

摘　　要：利用射频磁控溅射方法制备了Eu掺杂的AlN薄膜样品。光致发光光谱测试表明,通过控制实验条件,样品在室温下可以发出不同颜色的光:在613nm和407nm处出现的两个较强窄峰分别对应于可见光区的红光和紫光。红光峰源于样品中的Eu3+离子4f壳层的5 D0-7F2能级跃迁,紫光峰则源自Eu2+离子的5d和4f间的能级跃迁。实验结果表明,随着溅射功率的增加,紫光强度得到明显加强.另外,中心位于525nm处存在一个宽的PL光谱带,对应于可见光区的绿光,该峰的出现与Eu3+5 D1-7FJ能级跃迁和样品中存在的结构缺陷和氧污染等因素有关.Red and violet photoluminescence was observed in Eu--doped AlN films grown by reactive radio --frequency （RF） magnetron sputtering in different conditions. When the sample was excited at the room-- temperature, two narrow photoluminescence emissions were observed at 613 nm （red） and 407 nm （violet）, respectively. Red emissions from the AlN： Eu films are attributed to the Eu^3＋ 4f-4f intrashell transition of s Do →7F2. Violet emissions correspond to 5d--4f transition of Eu^2＋. It is found that the violet luminescence intensity enhance with the increase of radio--frequency power. Moreover, a broader emission band centered at 525 nm may associate with the 5 D1 -7Fj transition of Eu^3＋ and the presence of structural defects and oxygen impurities.

关 键 词：Eu掺杂AlN 光致发光光谱 射频磁控溅射 

分 类 号：TG146.21[一般工业技术—材料科学与工程]