化学气相沉积法合成石墨烯的转移技术研究进展  

Progress in Transfer Techniques of Graphene Synthesized by Chemical Vapor Deposition

作　　者：黄曼[1] 郭云龙[2] 武斌[2] 刘云圻[2] 付朝阳[1] 王帅[1] 

机构地区：[1]华中科技大学化学与化工学院,武汉430074 [2]中国科学院化学研究所有机固体重点实验室,北京100190

出　　处：《化学通报》2012年第11期974-974,共1页Chemistry

摘　　要：化学气相沉积(CVD)法合成石墨烯已为人们广泛研究采用。其中,如何将生长的石墨烯材料转移到与各种器件匹配的基底上是十分重要的科学问题。本文从方法、特点和结果等方面综述了由CVD法合成石墨烯的几种主要转移技术的研究进展,并对转移技术的未来做出了展望。The growth of graphene by chemical vapour deposition（CVD） is being widely studied.The transfer of graphene grown by CVD onto a substrate for making devices is a very important area of research.In this paper,six main transfer techniques of CVD-grown graphene were analyzed.Also,the advances in the methods,characteristics and results of the transfer techniques of CVD-grown graphene were discussed.Finally,the future of transfer techniques was briefly introduced.

关 键 词：化学气相沉积法 石墨烯 转移技术 

分 类 号：O613.71[理学—无机化学]