HgCdTe红外探测器CdTe钝化蒸发生长改进  

Advanced CdTe passivation layer deposited by evaporation on HgCdTe infrared detectors

作　　者：徐竟杰[1,2] 陈兴国[1] 周松敏[1] 魏彦锋[1] 林春[1] 杨建荣[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外成像材料与器件重点实验室,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《激光与红外》2012年第11期1263-1267,共5页Laser & Infrared

摘　　要：在液相外延生长(LPE)的碲镉汞(HgCdTe)外延薄膜(111)方向上蒸发生长碲化镉(CdTe)钝化层。在70～250℃范围内的各个不同的温度环境下进行碲化镉钝化膜的蒸发生长。根据需要,对各样本进行150～300℃各个温度下的后期退火处理。运用扫描电镜(SEM)、透射电镜(TEM)、二次离子质谱(SIMS)、X射线衍射(XRD)观测技术表征碲化镉钝化膜的形貌结构、成分分布、晶体质量。结果表明,加热环境下蒸发生长碲化镉钝化膜可以消除常规蒸发生长中的柱状多晶结构,显著提高钝化品质;后期的退火处理还能进一步提高钝化膜质量。CdTe surface passivation layers were deposited by evaporation on （111 ） liquid phase epitaxy （LPE） grown HgCdTe epilayers. The processes of CdTe layer deposition were carried out at different temperatures ranging from 70 ℃to 250 ℃. Furthermore,prepared samples were annealed at a temperature range between 150℃ and 300℃. Scan- ning electron microscope （SEM） and transmission electron microscope （TEM） were used to evaluate the profile and structure of CdTe passivation layers. The compositional properties were surveyed by secondary ion mass spectroscopy （SIMS）. X-ray diffraction （XRD） characterized the crystal quality. The experimental results show that heating during the deposition process can eliminate the columnar and polycrystalline structure in course of general evaporation, and effectively improve the quality of CdTe passivation layers. The annealing treatment can provide further improvement.

关 键 词：碲化镉 碲镉汞 钝化 扫描电镜 透射电镜 二次离子质谱 X射线衍射 

分 类 号：TN215[电子电信—物理电子学]