超导磁通量子比特的电路参数设计  

PARAMETER DESIGN FOR SUPERCONDUCTING FLUX QUBIT CIRCUIT

作　　者：朱冉[1] 许伟伟[1] 翟计全[1] 吉争鸣[1] 孙国柱[1] 曹春海[1] 陈健[1] 

机构地区：[1]南京大学电子科学与工程学院超导电子学研究所,南京210093

出　　处：《低温物理学报》2012年第6期436-440,共5页Low Temperature Physical Letters

基　　金：国家重点基础研究发展计划(批准号:2011CBA00107;2011CBA00202);国家自然科学基金(批准号:61027008;11074114)资助的课题~~

摘　　要：超导量子比特是目前最有竞争力的量子比特之一,本文讨论了影响量子比特电路性能的主要参数,分析了超导量子干涉仪(SQUID)的势能函数形状及势垒高度与势阱中所包含的能级数目的关系,由此给出了实现磁通超导量子比特相应的电路框图及主要参数的设计值.针对悬空掩膜斜蒸发制Al/Al2O3/Al隧道结工艺,设计了光刻版图.The superconducting qubits are the .most comparative qubits nowadays. This article introduced a discussion about main parameters which can affect the performance of superconducting flux qubit circuit and an analysis of the relations between the potential energy function curve and the barrier height of superconducting quantum interference device（SQUID）and the number of energy levels included in the potential well. This article also gave the lithography rigid design for the fabrication of A1/Al2O3/A1 tunnel junction using suspended mask structure and oblique evaporation. It will be a solid foundation for superconducting qubits fabrication.

关 键 词：超导磁通量子比特 SQUID Al/Al2O3/Al隧道结 

分 类 号：O413[理学—理论物理]