Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Prot filter  

作　　者：范鑫烨 黄永清 任晓敏 段晓峰 胡服全 王琦 

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications

出　　处：《Chinese Optics Letters》2012年第11期9-12,共4页中国光学快报（英文版）

基　　金：supported by the National"973"Pro-gram of China(No.2010CB327600);the National Natural Science Foundation of China(No.61020106007);the Fundamental Research Funds for the Central University(No.BUPT2011RC0403);the National"863"Program of China(No.2007AA03Z418);the 111 Project of China(No.B07005);the Program for Changjiang Scholars and Innovative Research Team in University MOE,China(No.IRT0609)

摘　　要：A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm （1558 and 1 577 nm）. The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectivelyA novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm （1558 and 1 577 nm）. The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectively

关 键 词：GaAs PIN InP rot filter Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-P 

分 类 号：TN713[电子电信—电路与系统]