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机构地区:[1]Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences [2]Graduate University of Chinese Academy of Sciences
出 处:《Chinese Optics Letters》2012年第11期60-64,共5页中国光学快报(英文版)
基 金:supported by the National Natural Science Foundation of China(Nos.60937003 and 61111120100)
摘 要:The effects of bismuth doping content and temperature on the absorption property and near-infrared (NIR) luminescence of Bi-doped La2O3-Al2O3-SiO2 (LAS) glasses are presented. The emission intensity reaches the maximum when the Bi2O3 content in 3.0Bi-LAS is 1.83%. The emission spectra reach their peaks at 1 190 and 1 117 nm, with full-width at half-maximum (FWHM) values of 330 and 228 nm under 500 and 700-nm excitations, respectively. As the Bi203 content increases, the peak wavelengths and FWHMs of emission bands increase, but their lifetimes decrease. The lifetime of 2.0Bi-LAS is 460 μs at 9 K, and is almost temperature independent until 350 K. The NIR emission of Bi in the system has strong resistance to thermal quenching from 9 to 350 K.The effects of bismuth doping content and temperature on the absorption property and near-infrared (NIR) luminescence of Bi-doped La2O3-Al2O3-SiO2 (LAS) glasses are presented. The emission intensity reaches the maximum when the Bi2O3 content in 3.0Bi-LAS is 1.83%. The emission spectra reach their peaks at 1 190 and 1 117 nm, with full-width at half-maximum (FWHM) values of 330 and 228 nm under 500 and 700-nm excitations, respectively. As the Bi203 content increases, the peak wavelengths and FWHMs of emission bands increase, but their lifetimes decrease. The lifetime of 2.0Bi-LAS is 460 μs at 9 K, and is almost temperature independent until 350 K. The NIR emission of Bi in the system has strong resistance to thermal quenching from 9 to 350 K.
关 键 词:ALUMINOSILICATES Emission spectroscopy Glass Infrared devices Lanthanum oxides
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