Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poisson equation  

作　　者：S.Das A.K.Panda G.N.Dash 

机构地区：[1]National Institute of Science and Technology,Palur Hills,Berhampur,Odisha,761008,India

出　　处：《Journal of Semiconductors》2012年第11期16-23,共8页半导体学报（英文版）

摘　　要：The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.

关 键 词：MODFET 2-DEG polarization critical thickness self-heating 

分 类 号：TN386[电子电信—物理电子学]