Preparation and properties of polycrystalline silicon seed layers on graphite substrate  

作　　者：李宁 陈诺夫 白一鸣 何海洋 

机构地区：[1]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,School of Renewable Energy Engineering,North China Electric Power University [2]State Key Laboratory of Silicon Materials,Zhejiang University

出　　处：《Journal of Semiconductors》2012年第11期28-31,共4页半导体学报（英文版）

基　　金：supported by the National High-Tech Research & Development Program(No.2011AA050507);the National Natural Science Foundation of China(Nos.61006150,61076051);the Natural Science Foundation of Beijing(No.2102042);the Basic Research Operating Expenses Special Fund of Central University(No.10QG24)

摘　　要：Polycrystalline silicon（poly-Si） seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of Si（220） preferred orientation. When the substrate temperature is higher than 700℃,the peak intensity of X-ray diffraction（XRD） from Si（220） increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing （RTA） temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si（220） preferred orientation of poly-Si seed layers.Polycrystalline silicon（poly-Si） seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of Si（220） preferred orientation. When the substrate temperature is higher than 700℃,the peak intensity of X-ray diffraction（XRD） from Si（220） increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing （RTA） temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si（220） preferred orientation of poly-Si seed layers.

关 键 词：polycrystalline silicon graphite rapid thermal annealing preferred orientation 

分 类 号：TN304.12[电子电信—物理电子学] O484.1[理学—固体物理]